Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices
| Autor: | Patil, Samadhan B., Vairagar, Anand V., Kumbhar, Alka A., Sahu, Laxmi K., Ramgopal Rao, V., Venkatramani, N., Dusane, R.O. *, Schroeder, B. |
|---|---|
| Zdroj: | In Thin Solid Films 2003 430(1):63-66 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect