Hole transport due to shallow acceptors along boron doped SiGe quantum wells
| Autor: | Altukhov, I.V, Kagan, M.S *, Sinis, V.P, Thomas, S.G, Wang, K.L, Blom, A, Odnoblyudov, M.O |
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| Zdroj: | In Thin Solid Films 2000 380(1):218-220 |
| Databáze: | ScienceDirect |
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