Plasma processed ultra-thin SiO 2 interfaces for advanced silicon NMOS and PMOS devices: applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics
| Autor: | Lucovsky, Gerald *, Yang, Hanyang, Wu, Yider, Niimi, Hiroake |
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| Zdroj: | In Thin Solid Films 2000 374(2):217-227 |
| Databáze: | ScienceDirect |
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