A self-aligned epitaxially grown channel MOSFET device architecture for strained Si/SiGe systems
| Autor: | Leong, W.Y *, Churchill, A.C, Robbins, D.J, Glasper, J.L, Williams, G.M |
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| Zdroj: | In Thin Solid Films 3 July 2000 369(1-2):375-378 |
| Databáze: | ScienceDirect |
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