Strain-driven modification of the Ge/Si growth mode in stacked layers: a way to produce Ge islands having equal size in all layers
| Autor: | Le Thanh, Vinh *, Yam, V, Boucaud, P, Zheng, Y, Bouchier, D |
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| Zdroj: | In Thin Solid Films 3 July 2000 369(1-2):43-48 |
| Databáze: | ScienceDirect |
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