Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy

Autor: Seutter, S.M., Xie, M.H. *, Zhu, W.K., Zheng, L.X., Wu, H.S., Tong, S.Y.
Zdroj: In Surface Science 20 January 2000 445(2-3):L71-L75
Databáze: ScienceDirect