Step edge barriers versus step edge relaxation in GaAs:Sn molecular beam epitaxy
| Autor: | Dabiran, A.M., Seutter, S.M., Stoyanov, S., Bartelt, M.C., Evans, J.W., Cohen, P.I. |
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| Zdroj: | In Surface Science 1999 438(1):131-141 |
| Databáze: | ScienceDirect |
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