Atomic structure of the (2×4) In0.53Ga0.47As/InP(001) reconstructed surface. A study of average strain and growth temperature effects on the indium segregation

Autor: Aı̈d, K. *, Garreau, Y., Sauvage-Simkin, M., Pinchaux, R.
Zdroj: In Surface Science 20 April 1999 425(2-3):165-173
Databáze: ScienceDirect