Atomic structure of the (2×4) In0.53Ga0.47As/InP(001) reconstructed surface. A study of average strain and growth temperature effects on the indium segregation
Autor: | Aı̈d, K. *, Garreau, Y., Sauvage-Simkin, M., Pinchaux, R. |
---|---|
Zdroj: | In Surface Science 20 April 1999 425(2-3):165-173 |
Databáze: | ScienceDirect |
Externí odkaz: |