Step-by-step growth of an epitaxial Si4O5N3 single layer on SiC(0001) in ultrahigh vacuum
| Autor: | Mizuno, Seigi, Matsuo, Tomomi, Nakagawa, Takeshi |
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| Zdroj: | In Surface Science July 2017 661:22-27 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Mizuno, Seigi, Matsuo, Tomomi, Nakagawa, Takeshi |
|---|---|
| Zdroj: | In Surface Science July 2017 661:22-27 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect