First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence
| Autor: | Akiyama, Toru, Ito, Ayako, Nakamura, Kohji, Ito, Tomonori, Kageshima, Hiroyuki, Uematsu, Masashi, Shiraishi, Kenji |
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| Zdroj: | In Surface Science November 2015 641:174-179 |
| Databáze: | ScienceDirect |
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