Improved graphene growth in UHV: Pit-free surfaces by selective Si etching of SiC(0001)–Si with atomic hydrogen
| Autor: | Sandin, Andreas, Rowe, J.E. (Jack), Dougherty, Daniel B. |
|---|---|
| Zdroj: | In Surface Science May 2013 611:25-31 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect