Conditions of ion implantation into thin amorphous Si gate layers for suppressing threshold voltage shift
Autor: | Suzuki, Kunihiro *, Sudo, Ritsuo |
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Zdroj: | In Solid State Electronics 2000 44(6):1043-1047 |
Databáze: | ScienceDirect |
Externí odkaz: |
Autor: | Suzuki, Kunihiro *, Sudo, Ritsuo |
---|---|
Zdroj: | In Solid State Electronics 2000 44(6):1043-1047 |
Databáze: | ScienceDirect |
Externí odkaz: |