A simulation study on the DC characteristics of the Ga 0.52In 0.48P/In 0.2Ga 0.8As/Ga 0.52In 0.48P double heterojunction pseudomorphic high electron mobility transistor

Autor: Yoon, S.F *, Kam, Adele H.T, Gay, B.P, Zheng, H.Q
Zdroj: In Solid State Electronics 2000 44(6):1035-1042
Databáze: ScienceDirect