A simulation study on the DC characteristics of the Ga 0.52In 0.48P/In 0.2Ga 0.8As/Ga 0.52In 0.48P double heterojunction pseudomorphic high electron mobility transistor
Autor: | Yoon, S.F *, Kam, Adele H.T, Gay, B.P, Zheng, H.Q |
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Zdroj: | In Solid State Electronics 2000 44(6):1035-1042 |
Databáze: | ScienceDirect |
Externí odkaz: |