GaN epilayers grown on 100 mm diameter Si(111) substrates
| Autor: | Liaw, H.M *, Venugopal, R, Wan, J, Doyle, R, Fejes, P.L, Melloch, M.R |
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| Zdroj: | In Solid State Electronics 2000 44(4):685-690 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Liaw, H.M *, Venugopal, R, Wan, J, Doyle, R, Fejes, P.L, Melloch, M.R |
|---|---|
| Zdroj: | In Solid State Electronics 2000 44(4):685-690 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect