Soft breakdown in very thin Ta 2O 5 gate dielectric layers

Autor: Houssa, M *, Mertens, P.W, Heyns, M.M, Jeon, J.S, Halliyal, A, Ogle, B
Zdroj: In Solid State Electronics 2000 44(3):521-525
Databáze: ScienceDirect