Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction
| Autor: | Sonnenberg, Victor *, Martino, João Antonio |
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| Zdroj: | In Solid State Electronics 1999 43(12):2191-2199 |
| Databáze: | ScienceDirect |
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