Using TLM principles to determine MOSFET contact and parasitic resistance
Autor: | Reeves, Geoffrey K, Harrison, H.Barry |
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Zdroj: | In Solid State Electronics 1997 41(8):1067-1074 |
Databáze: | ScienceDirect |
Externí odkaz: |
Autor: | Reeves, Geoffrey K, Harrison, H.Barry |
---|---|
Zdroj: | In Solid State Electronics 1997 41(8):1067-1074 |
Databáze: | ScienceDirect |
Externí odkaz: |