Improved reliability of wet oxidized nitride MOS capacitors in comparison to RTP N 2O oxidized nitride films

Autor: Mazumder, Motaharul Kabir, Kobayashi, Kiyoteru, Ogata, Tamotsu, Mitsuhashi, Jun-Ichi, Mashiko, Yoji, Kawazu, Satoru, Sekine, Masahiro, Koyama, Hiroshi, Yasuoka, Akihiko
Zdroj: In Solid State Electronics 1997 41(5):749-755
Databáze: ScienceDirect