Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs
| Autor: | Singh, Khoirom Johnson, Acharya, Lomash Chandra, Bulusu, Anand, Dasgupta, Sudeb |
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| Zdroj: | In Solid State Electronics June 2024 216 |
| Databáze: | ScienceDirect |
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