Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET
| Autor: | Bae, Hagyoul, Lee, Geon Bum, Yoo, Jaewook, Lee, Khwang-Sun, Ku, Ja-Yun, Kim, Kihyun, Kim, Jungsik, Ye, Peide D., Park, Jun-Young, Choi, Yang-Kyu |
|---|---|
| Zdroj: | In Solid State Electronics May 2024 215 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect