Modeling and simulation of successive breakdown events in thin gate dielectrics using standard reliability growth models
Autor: | Miranda, E., Aguirre, F.L., Salvador, E., González, M.B., Campabadal, F., Suñé, J. |
---|---|
Zdroj: | In Solid State Electronics December 2023 210 |
Databáze: | ScienceDirect |
Externí odkaz: |