Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?
Autor: | Tahiat, A., Cretu, B., Veloso, A., Simoen, E. |
---|---|
Zdroj: | In Solid State Electronics November 2023 209 |
Databáze: | ScienceDirect |
Externí odkaz: |