New insights into low frequency noise (LFN) sources analysis in GaN/Si MIS-HEMTs

Autor: Kom Kammeugne, R., Theodorou, C., Leroux, C., Vauche, L., Mescot, X., Gwoziecki, R., Becu, S., Charles, M., Bano, E., Ghibaudo, G.
Zdroj: In Solid State Electronics February 2023 200
Databáze: ScienceDirect