Performance of vertical gate-all-around nanowire p-MOS transistors determined by boron depletion during oxidation

Autor:	Rossi, Chiara, Burenkov, Alexander, Pichler, Peter, Bär, Eberhard, Müller, Jonas, Larrieu, Guilhem
Zdroj:	In Solid State Electronics February 2023 200
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect