Analysis of uniaxial stress impact on drift velocity of 4H-SiC by full-band Monte Carlo simulation

Autor:	Nishimura, T., Eikyu, K., Sonoda, K., Ogata, T.
Zdroj:	In Solid State Electronics January 2023 199
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect