Analysis of uniaxial stress impact on drift velocity of 4H-SiC by full-band Monte Carlo simulation
Autor: | Nishimura, T., Eikyu, K., Sonoda, K., Ogata, T. |
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Zdroj: | In Solid State Electronics January 2023 199 |
Databáze: | ScienceDirect |
Externí odkaz: |