Effects of Si-doped GaN insert layer in AlGaN/GaN/GaN:Si/AlN DH-HEMT structure
| Autor: | Jung, Donghyeop, Kim, Minho, Choi, Uiho, Kim, Keono, Nam, Okhyun |
|---|---|
| Zdroj: | In Solid State Electronics January 2023 199 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
| Autor: | Jung, Donghyeop, Kim, Minho, Choi, Uiho, Kim, Keono, Nam, Okhyun |
|---|---|
| Zdroj: | In Solid State Electronics January 2023 199 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect