Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

Autor: García, H., Jiménez-Molinos, F., Vinuesa, G., González, M.B., Roldán, J.B., Miranda, E., Campabadal, F., Castán, H., Dueñas, S.
Zdroj: In Solid State Electronics August 2022 194
Databáze: ScienceDirect