Effect of doping on Al2O3/GaN MOS capacitance
| Autor: | Rrustemi, B., Piotrowicz, C., Jaud, M-A., Triozon, F., Vandendaele, W., Mohamad, B., Gwoziecki, R., Ghibaudo, G. |
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| Zdroj: | In Solid State Electronics August 2022 194 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect