Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach

Autor: DehdashtiAkhavan, Nima, Antonio Umana-Membreno, Gilberto, Gu, Renjie, Antoszewski, Jarek, Faraone, Lorenzo, Cristoloveanu, Sorin
Zdroj: In Solid State Electronics July 2022 193
Databáze: ScienceDirect