Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
Autor: | García, Héctor, Vinuesa, Guillermo, Ossorio, Óscar G., Sahelices, Benjamín, Castán, Helena, Dueñas, Salvador, González, Mireia B., Campabadal, Francesca |
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Zdroj: | In Solid State Electronics September 2021 183 |
Databáze: | ScienceDirect |
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