Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

Autor: García, Héctor, Vinuesa, Guillermo, Ossorio, Óscar G., Sahelices, Benjamín, Castán, Helena, Dueñas, Salvador, González, Mireia B., Campabadal, Francesca
Zdroj: In Solid State Electronics September 2021 183
Databáze: ScienceDirect