A current model for FOI FinFETs with back-gate bias modulation

Autor: Liu, F.Y., Zhang, X., Zhang, F.Y., Li, B., Li, B.H., Huang, Y., Wang, G.Q., Chen, S.Y., Zhang, Q.Z., Yin, H.X., Luo, J.J., Han, Z.S., Guo, Y.F., Cristoloveanu, S.
Zdroj: In Solid State Electronics November 2021 185
Databáze: ScienceDirect