Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
| Autor: | Vinuesa, G., Ossorio, O.G., García, H., Sahelices, B., Castán, H., Dueñas, S., Kull, M., Tarre, A., Jogiaas, T., Tamm, A., Kasikov, A., Kukli, K. |
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| Zdroj: | In Solid State Electronics September 2021 183 |
| Databáze: | ScienceDirect |
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