Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature

Autor: Paz, Bruna Cardoso, Cassé, Mikaël, Haendler, Sebastien, Juge, Andre, Vincent, Emmanuel, Galy, Philippe, Arnaud, Franck, Ghibaudo, Gérard, Vinet, Maud, de Franceschi, Silvano, Meunier, Tristan, Gaillard, Fred
Zdroj: In Solid State Electronics December 2021 186
Databáze: ScienceDirect