Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation

Autor:	Magnone, P., Tallarico, A.N., Pistollato, S., Depetro, R., Croce, G.
Zdroj:	In Solid State Electronics November 2021 185
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect