A physics-based compact model of phase change for the design of cross-point storage-class memories

Autor: Kim, Donguk, Tae Jang, Jun, Myong Kim, Dong, Choi, Sung-Jin, Ban, Sanghyun, Shin, Minchul, Lee, Hanwool, Dong Lee, Hyung, Mo, Hyun-Sun, Hwan Kim, Dae
Zdroj: In Solid State Electronics November 2021 185
Databáze: ScienceDirect
Externí odkaz: