Abnormal threshold voltage shift by the effect of H2O during negative bias stress in amorphous InGaZnO thin film transistors

Autor: Ha, Tae-Kyoung, Kim, Yongjo, Yu, SangHee, Kim, GwangTae, Jeong, Hoon, Park, JeongKi, Kim, Ohyun
Zdroj: In Solid State Electronics December 2020 174
Databáze: ScienceDirect