Electron mobility of strained InGaAs long-channel MOSFETs: From scattering rates to TCAD model
| Autor: | Carapezzi, Stefania, Reggiani, Susanna, Gnani, Elena, Gnudi, Antonio |
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| Zdroj: | In Solid State Electronics October 2020 172 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect