Severe hump phenomenon induced by increased charge trapping and suppression of electron capture effect in amorphous In-Ga-Zn-O thin-film transistors under unipolar pulsed drain bias with static positive gate bias stress
| Autor: | Kim, Yongjo, Ha, Tae-Kyoung, Cho, Yong-Jung, Kang, Yun-Seong, Yu, SangHee, Kim, GwangTae, Jeong, Hun, Park, Jeong Ki, Kim, Ohyun |
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| Zdroj: | In Solid State Electronics May 2020 167 |
| Databáze: | ScienceDirect |
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