Bulk n-channel MOSFETs with buried stressor at the 28 nm process node
| Autor: | Clifton, Paul, Goebel, Andreas, Kessler, Matthias, Majer, Martin, Knaeblein, Karsten, Hoentschel, Jan, Hemkar, Manish, Chu, Schubert, Moffatt, Steve |
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| Zdroj: | In Solid State Electronics April 2020 166 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect