Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells

Autor: Navarro, S., Marquez, C., Lee, K.H., Navarro, C., Parihar, M., Park, H., Galy, P., Bawedin, M., Kim, Y.T., Cristoloveanu, S., Gamiz, F.
Zdroj: In Solid State Electronics September 2019 159:12-18
Databáze: ScienceDirect