Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model
Autor: | Trojman, L., Ragnarsson, L.-Å., Collaert, N. |
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Zdroj: | In Solid State Electronics April 2019 154:24-30 |
Databáze: | ScienceDirect |
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