Pulse duration effect during pulsed gate-bias stress in a-InGaZnO thin film transistors
| Autor: | Kim, Woo-Sic, Kang, Yun-Seong, Cho, Yong-Jung, Park, JeongKi, Kim, GeonTae, Kim, Ohyun |
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| Zdroj: | In Solid State Electronics February 2019 152:53-57 |
| Databáze: | ScienceDirect |
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