Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors – Physical interpretation of transport phenomena
| Autor: | Nafaa, B., Cretu, B., Ismail, N., Touayar, O., Carin, R., Simoen, E., Veloso, A. |
|---|---|
| Zdroj: | In Solid State Electronics December 2018 150:1-7 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect