Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics
| Autor: | Hourdakis, E., Casanova, A., Larrieu, G., Nassiopoulou, A.G. |
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| Zdroj: | In Solid State Electronics May 2018 143:77-82 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect