Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements

Autor: Kriso, C., Triozon, F., Delerue, C., Schneider, L., Abbate, F., Nolot, E., Rideau, D., Niquet, Y.-M., Mugny, G., Tavernier, C.
Zdroj: In Solid State Electronics March 2017 129:93-96
Databáze: ScienceDirect