DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
| Autor: | Deshpande, V., Djara, V., O'Connor, E., Hashemi, P., Balakrishnan, K., Caimi, D., Sousa, M., Czornomaz, L., Fompeyrine, J. |
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| Zdroj: | In Solid State Electronics February 2017 128:87-91 |
| Databáze: | ScienceDirect |
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