Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14 nm UTBB FDSOI technology
| Autor: | Berthelon, R., Andrieu, F., Ortolland, S., Nicolas, R., Poiroux, T., Baylac, E., Dutartre, D., Josse, E., Claverie, A., Haond, M. |
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| Zdroj: | In Solid State Electronics February 2017 128:72-79 |
| Databáze: | ScienceDirect |
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