Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors
| Autor: | Morita, Yukinori, Mori, Takahiro, Migita, Shinji, Mizubayashi, Wataru, Fukuda, Koichi, Matsukawa, Takashi, Endo, Kazuhiko, O’uchi, Shin-ichi, Liu, Yongxun, Masahara, Meishoku, Ota, Hiroyuki |
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| Zdroj: | In Solid State Electronics November 2015 113:173-178 |
| Databáze: | ScienceDirect |
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