A study on NiGe-contacted Ge n+/p Ge shallow junction prepared by dopant segregation technique
| Autor: | Tsui, Bing-Yue, Shih, Jhe-Ju, Lin, Han-Chi, Lin, Chiung-Yuan |
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| Zdroj: | In Solid State Electronics May 2015 107:40-46 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect