Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

Autor: Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., Nguyen, N.D.
Zdroj: In Solid State Electronics August 2015 110:65-70
Databáze: ScienceDirect